5SHY4045L0001 ABB 3BHB018162R0001 Asymmetric Integrated Gate Commutated Thyristor

Description:

5SHY4045L0001 ABB 3BHB018162R0001 Asymmetric Integrated Gate Commutated Thyristor

The HPT-IGCT series began in 2009 with the release of the asymmetric 4500 V device, the 5HY 55L4500. Subsequent devices included the asymmetric 6500 V device, the 5HY 42L6500, in 2010, and another asymmetric device rated at 5500 V, the 5SY 50L5500, in 2012. All of these devices share the same package design, with a copper pole piece diameter of 85 mm (see Figure 1). The key advantage of the HPT-IGCT lies in its thyristor-like conduction state, which maximizes the ability to tailor the on-state plasma distribution to achieve an optimal balance between conduction and off-state losses. The device is also known for its robust mechanical design and effective thermal bonding with coolers.

Despite these advantages, the HPT-IGCT has two significant disadvantages compared to competing GBTs in the same power range. The first is the relatively high effort required to control the device.

Features:

• High snubberless turn-off rating
• Optimized for medium frequency
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Option for series connection (contact factory)